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NCMOS NHighly Accurate : 2%
GMicroprocessor reset circuitry GMemory battery back-up circuits GPower-on reset circuits GPower failure detection GSystem battery life and charge voltage monitors
NLow Power Consumption : 0.7A (VIN = 1.5V) NUltra small SSOT-24 (SC-82) Package
2
The XC61C series are highly precise, low power consumption voltage detectors, manufactured using CMOS and laser trimming technologies. Detect voltage is extremely accurate with minimal temperature drift. Both CMOS and N-channel open drain output configurations are available.
Highly accurate : 2% Low power consumption: TYP 0.7 A [ VIN=1.5V ] Detect voltage range : 0.9V ~ 1.5V in 0.1V increments Operating voltage range : 0.7V ~ 6.0V Detect voltage temperature characteristics : TYP 100ppm/C Output configuration : N-channel open drain or CMOS Ultra small package : SSOT-24 (150mW) super mini-mold : SOT-23 (150mW) mini-mold : SOT-89 (500mW) mini-power mold : TO-92 ( 300mW ) Note : There are no products available with a set-up voltage accuracy of 1%.
CMOS Output
N-ch Open Drain Output
SUPPLY CURRENT vs. INPUT VOLTAGE
131
PIN NUMBER SSOT-24 2 4 1 3 SOT-23 3 2 1 SOT-89 2 3 1 TO-92 (T) TO-92 (L) 2 3 1 1 2 3 -
PIN NAME VIN VSS VOUT NC
FUNCTION Supply Voltage Input Ground Output No Connection
2
GOrdering Information
XC61C x x x x x x x a b cdef DESIGNATOR a DESCRIPTION Output Configuration : C = CMOS N = N-ch open drain Detect Voltage : 09 = 0.9V 15 = 1.5V Output Delay : 0 = No delay Detect Accuracy : 2 = within 2.0% DESIGNATOR e DESCRIPTION Package Type: N = SSOT-24 (SC-82) M = SOT-23 P = SOT-89 T = TO-92 (Standard) L = TO-92 (Custom pin Configuration) Device Orientation : R = Embossed Tape ( Right ) L = Embossed Tape ( Left ) H = Paper Type ( TO-92) B = Bag ( TO-92 )
b
c
f
d
132
GSSOT-24 (SC-82)
2
GSOT-23
133
GSOT-89
2
GTO-92
134
GSSOT-24, SOT-23, SOT-89
w
qwr qwer
r e
q
2
q
DESIGNATOR A B
CONFIGURATION
CMOS CMOS
VOLTAGE (V) 0.w 1.w
DESIGNATOR K L
CONFIGURATION
N-ch N-ch
VOLTAGE (V) 0.w 1.w
w
e
DESIGNATOR 0 1 2 3 4
VOLTAGE q.0 q.1 q.2 q.3 q.4
DESIGNATOR 5 6 7 8 9
VOLTAGE q .5 q .6 q .7 q .8 q .9
DESIGNATOR 3
r
GTO-92
q
1 2345 67 1 2345 67
w
r
t
y u
135
2
Ta = 25 OC
PARAMETER Input Voltage Output Current Output Voltage CMOS N-ch open drain SSOT-24 Power Dissipation SOT-23 SOT-89 TO-92 Operating Ambient Temperature Storage Temperature
SYMBOL V IN IOUT VOUT
RATINGS 9 50
VSS -0.3 ~ VIN +0.3 VSS -0.3 ~ 9
UNITS V mA V
150 Pd 150 500 300 Topr Tstg -40 ~ +85 -40 ~ +125
O
mW
C C
O
136
V DF (T) = 0.9 to 1.5V 2%
Ta = 25 OC
PARAMETER Detect Voltage Hysteresis Range
SYMBOL V DF V HYS
CONDITIONS
MIN VDF
x 0.98
TYP VDF VDF
x 0.05
MAX VDF
x 1.02
UNITS V V
CIRCUIT 1 1
VDF
x 0.02
VDF
x 0.08
Supply Current
ISS
Operating Voltage
V IN N-ch
VIN = 1.5V =2.0V =3.0V =4.0V =5.0V VDF(T) = 0.9V to 1.5V VDS=0.5V VIN=0.7V =1.0V VDS=2.1V VIN=6.0V ( with CMOS output ) -40 OC Topr 85OC
0.7 0.8 0.9 1.0 1.1 0.7 0.1 0.85 0.8 2.7 -7.5 100
2.3 2.7 3.0 3.2 3.6 6.0
A
2
2
V
1 3
Output Current
IOUT
mA -1.5 ppm/C 0.2 ms 4 5
P-ch
Temperature Characteristics Delay Time (VDR VOUT inversion)
VDF Topr * VDF tDLY
Note : VDF (T) : Established Detect Voltage Value Release Voltage : VDR = VDF + VHYS
137
GFunctional Description ( CMOS output )
q w e r
2
t y
GTiming Chart
y
qw
e
r
t
138
GNotes on Use
2
GOscillation Description
139
2
140
(1) SUPPLY CURRENT vs. INPUT VOLTAGE
2
(2) DETECT, RELEASE VOLTAGE vs. AMBIENT TEMPERATURE
(3) OUTPUT VOLTAGE vs. INPUT VOLTAGE
141
(4) N-ch DRIVER OUTPUT CURRENT vs. VDS
2
(5) N-ch DRIVER OUTPUT CURRENT vs. INPUT VOLTAGE
(6) P-ch DRIVER OUTPUT CURRENT vs. INPUT VOLTAGE
142

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